The RHODaS research project has released a new report, “Active Gate Drivers for High Power, High-Frequency WBG Devices,” as part of its deliverables. The studies focus on developing and testing an innovative active gate driver (AGD) designed explicitly for high-power GaN (gallium nitride) switches. This AGD aims to harness the full potential of GaN’s high-speed capabilities, even under varying temperatures and load currents.

The research aims to tackle the challenges posed by these devices’ high-speed switching characteristics, which can lead to issues such as oscillations, overshoots, and electromagnetic interference (EMI). One of the key innovations presented in the report is a novel gate-driving approach based on high-frequency pulse width modulation (PWM). This method involves shaping a custom gate voltage profile to control the energy applied during the turn-on and turn-off transitions of GaN transistors. The goal is to reduce overshoots, oscillations, and EMI  without significantly increasing switching losses. High-frequency PWM is generated using a field-programmable gate array (FPGA), allowing for dynamic adjustment of the gate voltage.

The research includes both simulation and experimental validation of the proposed gate-driving method.  Simulations were conducted using LTspice, and the results showed a significant reduction in overshoots and oscillations compared to conventional gate drivers.
Experimental evaluations were carried out using a comprehensive laboratory setup that included GaN devices, a totem-pole driver, and an FPGA. The experimental results not only corroborated the simulation findings but also demonstrated the robustness and effectiveness of the proposed gate-driving technique in real-world conditions.

You can now read and download the full report, which provides a comprehensive understanding of the research and its implications.